Microchip Technology, Inc. Single Bipolar Transistors JANS2N3440L

The JANS2N3440L is a radiation-hardened NPN silicon transistor designed for high-reliability applications, qualified per MIL-PRF-19500/368 and rated for 10K Rads (Si) total ionizing dose. It is packaged in a TO-5 case and supports a maximum collector-emitter voltage of 250 Vdc and a collector current of 1.0 Adc. The device has a total power dissipation of 5.0 W at +25°C, derating linearly at 28.5 mW/°C above that temperature. Operating and storage temperatures range from -65°C to +200°C. Electrical characteristics include a minimum hFE of 30 at 2.0 mA collector current and a collector-emitter saturation voltage of 0.5 Vdc at 50 mA collector and 4 mA base current. Switching times are 1.0 µs turn-on and 10 µs turn-off under specified conditions.