Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays JANS2N2920U

Description
Win Source Part Number: 999211-JANS2N2920U Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Military, MIL-PRF-19500/355 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 30mA Transistor Type: 2 NPN (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. HTSUS: 8541.21.0095 Mfr: Microchip Technology RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 999211-JANS2N2920U Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Military, MIL-PRF-19500/355 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 30mA Transistor Type: 2 NPN (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. HTSUS: 8541.21.0095 Mfr: Microchip Technology RoHS Status: RoHS non-compliant
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 999211-JANS2N2920U - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
999211-JANS2N2920U
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 999211-JANS2N2920U
Win Source Part Number: 999211-JANS2N2920U Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Military, MIL-PRF-19500/355 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 30mA Transistor Type: 2 NPN (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. HTSUS: 8541.21.0095 Mfr: Microchip Technology RoHS Status: RoHS non-compliant

Win Source Part Number: 999211-JANS2N2920U
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Series: Military, MIL-PRF-19500/355
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30mA
Transistor Type: 2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD
Temperature Range - Operating: -65°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
HTSUS: 8541.21.0095
Mfr: Microchip Technology
RoHS Status: RoHS non-compliant

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Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JANS2N2920U
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JANS2N2920U
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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 999211-JANS2N2920U JANS2N2920U
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3 MIL-PRF-19500/355
IC(max) 30 milliamps 30 milliamps
Power Gain 300 dB
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