Microchip Technology, Inc. Single Bipolar Transistors JANS2N2369AUB/TR

Description
Bipolar (BJT) Transistor NPN 20V 360mW Surface Mount UB
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 20V 360mW Surface Mount UB
Request a Quote Datasheet

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Single Bipolar Transistors - 150-JANS2N2369AUB/TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
150-JANS2N2369AUB/TR-ND
Single Bipolar Transistors 150-JANS2N2369AUB/TR-ND
Bipolar (BJT) Transistor NPN 20V 360mW Surface Mount UB

Bipolar (BJT) Transistor NPN 20V 360mW Surface Mount UB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1168308-JANS2N2369AUB/TR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1168308-JANS2N2369AUB/TR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1168308-JANS2N2369AUB/TR
Win Source Part Number: 1168308-JANS2N2369AU B/TR Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Military, MIL-PRF-19500/317 Package: Tape & Reel (TR) Standard Package: 1 Mounting: SMD (SMT) Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 20 V Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Package / Case: 3-SMD, No Lead Supplier Device Package: UB Temperature Range - Operating: -65°C ~ 200°C (TJ) Alternative Parts (Cross-Reference): JANS2N2369AUB-TR; JANS2N2369AUBTR; ECCN: EAR99 Fake Threat In the Open Market: 61 pct. HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 150-JANS2N2369AUB/TR

Win Source Part Number: 1168308-JANS2N2369AUB/TR
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Series: Military, MIL-PRF-19500/317
Package: Tape & Reel (TR)
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Temperature Range - Operating: -65°C ~ 200°C (TJ)
Alternative Parts (Cross-Reference): JANS2N2369AUB-TR; JANS2N2369AUBTR;
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
HTSUS: 8541.21.0095
Mfr: Microchip Technology
Other Names: 150-JANS2N2369AUB/TR

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - JANS2N2369AUB/TR - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JANS2N2369AUB/TR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JANS2N2369AUB/TR
TRANS NPN 20V UB

TRANS NPN 20V UB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 150-JANS2N2369AUB/TR-ND 1168308-JANS2N2369AUB/TR JANS2N2369AUB/TR
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type 3-SMD, No Lead SOT3
Transistor Grade / Operating Range Military
Power Gain 20 dB
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