Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single JAN2N930

Description
Win Source Part Number: 1023967-JAN2N930 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Military, MIL-PRF-19500/253 Package: Bulk Standard Package: 1 Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 30 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 1086-2369,1086-2369- MIL Base Product Number: 2N930 RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1023967-JAN2N930 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Military, MIL-PRF-19500/253 Package: Bulk Standard Package: 1 Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 30 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 1086-2369,1086-2369- MIL Base Product Number: 2N930 RoHS Status: RoHS non-compliant
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Suppliers

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Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1023967-JAN2N930 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1023967-JAN2N930
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1023967-JAN2N930
Win Source Part Number: 1023967-JAN2N930 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Military, MIL-PRF-19500/253 Package: Bulk Standard Package: 1 Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 30 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 1086-2369,1086-2369- MIL Base Product Number: 2N930 RoHS Status: RoHS non-compliant

Win Source Part Number: 1023967-JAN2N930
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Series: Military, MIL-PRF-19500/253
Package: Bulk
Standard Package: 1
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 30 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Microchip Technology
Other Names: 1086-2369,1086-2369-MIL
Base Product Number: 2N930
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Single Bipolar Transistors - 1086-2369-ND - DigiKey
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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - JAN2N930 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JAN2N930
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JAN2N930
TRANS NPN 45V 0.03A TO18

TRANS NPN 45V 0.03A TO18

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1023967-JAN2N930 1086-2369-ND JAN2N930
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3 TO-206AA, TO-18-3 Metal Can MIL-PRF-19500/253
IC(max) 30 milliamps 30 milliamps
Power Gain 100 dB
Output Power 0.3000 watts
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