The high-performance, low-power Microchip 8-bit AVR® RISC-based microcontroller combines 2 KB of ISP Flash memory, 128B ISP EEPROM, 128B internal SRAM, one 8/16-bit timer/counter with prescaler, one 8/10-bit high-speed timer/counter with PWM and separate prescaler, 10-bit A/D converter, a USI (Universal serial interface), and debugWIRE for on-chip debugging. The device supports a throughput of 16 MIPS at 16 MHz and operates between 2.7-5.5 volts.
By executing powerful instructions in a single clock cycle, the device achieves throughputs approaching one MIPS per MHz, balancing power consumption and processing speed.
For product comparison, please consider: ATTINY261A
Additional Features
Advanced RISC architecture
120 powerful instructions – most single clock cycle execution
32 x 8 general purpose working registers
Fully static operation
Non-volatile program and data memories
2K byte of in-system programmable program memory flash
Endurance: 10,000 write/erase cycles
128 bytes in-system programmable EEPROM
Endurance: 100,000 write/erase cycles
128 bytes internal SRAM
Programming lock for self-programming flash program and EEPROM data security
The high-performance, low-power Microchip 8-bit AVR® RISC-based microcontroller combines 2 KB of ISP Flash memory, 128B ISP EEPROM, 128B internal SRAM, one 8/16-bit timer/counter with prescaler, one 8/10-bit high-speed timer/counter with PWM and separate prescaler, 10-bit A/D converter, a USI (Universal serial interface), and debugWIRE for on-chip debugging. The device supports a throughput of 16 MIPS at 16 MHz and operates between 2.7-5.5 volts.
By executing powerful instructions in a single clock cycle, the device achieves throughputs approaching one MIPS per MHz, balancing power consumption and processing speed.
For product comparison, please consider: ATTINY261A
Additional Features
- Advanced RISC architecture
- 120 powerful instructions – most single clock cycle execution
- 32 x 8 general purpose working registers
- Fully static operation
- Non-volatile program and data memories
- 2K byte of in-system programmable program memory flash
- Endurance: 10,000 write/erase cycles
- 128 bytes in-system programmable EEPROM
- Endurance: 100,000 write/erase cycles
- 128 bytes internal SRAM
- Programming lock for self-programming flash program and EEPROM data security
