Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTC60HM45SCTG

Description
Features CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Motor Control Switched mode power supplies Uninterruptible power supplies
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Description
Features CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Motor Control Switched mode power supplies Uninterruptible power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide/Silicon Hybrid Modules - APTC60HM45SCTG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTC60HM45SCTG
Silicon Carbide/Silicon Hybrid Modules APTC60HM45SCTG
Features CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Motor Control Switched mode power supplies Uninterruptible power supplies

Features

  • CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated
  • SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Very low stray inductance
  • Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low Profile
  • RoHS compliant

Applications

  • Motor Control
  • Switched mode power supplies
  • Uninterruptible power supplies
Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTC60HM45SCTG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTC60HM45SCTG
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MOSFET 4N-CH 600V 49A SP4

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APTC60HM45SCTG APTC60HM45SCTG
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide
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