POWER MOS 8® is a high speed, highvoltage N-channel switch-mode power MOSFET. This 'FREDFET' version has adrain-source (body) diode that has been optimizedfor high reliability in ZVS phaseshifted bridge and other circuits through reduced trr, soft recovery, and high recoverydv/dt capability. Low gate charge, high gain, and agreatly reduced ratio of Crss/Ciss resultin excellent noise immunity and low switching loss. The intrinsic gate resistance andcapacitance of the poly-silicon gate structurehelp control di/dt during switching,resulting in low EMI and reliable paralleling, even when switching at very high frequency.
MOSFET N-CH 1000V 9A TO247
N-Channel 1000V 9A (Tc) 337W (Tc) Through Hole TO-247 [B]
MOSFET N-CH 1000V 9A TO247
| Richardson RFPD | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | APT9F100B | APT9F100B | APT9F100B-ND | APT9F100B |
| Product Name | Power FREDFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Type | Power FREDFET Transistor | |||
| Package Type | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 1000 volts |
