Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APT58M50JCU2

Description
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance ISOTOP Package (SOT-227) High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched mode power supplies Power Factor Correction Brake switch
Request a Quote Datasheet
Description
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance ISOTOP Package (SOT-227) High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched mode power supplies Power Factor Correction Brake switch
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide/Silicon Hybrid Modules - APT58M50JCU2 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APT58M50JCU2
Silicon Carbide/Silicon Hybrid Modules APT58M50JCU2
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance ISOTOP Package (SOT-227) High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched mode power supplies Power Factor Correction Brake switch

Features

  • Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Very low stray inductance
  • ISOTOP Package (SOT-227)
  • High level of integration

Benefits

  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • RoHS compliant

Applications

  • AC and DC motor control
  • Switched mode power supplies
  • Power Factor Correction
  • Brake switch
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT58M50JCU2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT58M50JCU2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT58M50JCU2
MOSFET N-CH 500V 58A SOT227

MOSFET N-CH 500V 58A SOT227

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APT58M50JCU2 APT58M50JCU2
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide
Unlock Full Specs
to access all available technical data