Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single APT56F60B2

Description
Win Source Part Number: 1097804-APT56F60B2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: POWER MOS 8™ Package: Tube Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1040W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX™ [B2] Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FCH47N60-F085; IRFPS43N50KPBF; IRFPS40N50LPBF; FCH47N60-F133; FCH077N65F-F155; SIHG47N60EF-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT56F60 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1097804-APT56F60B2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: POWER MOS 8™ Package: Tube Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1040W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX™ [B2] Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FCH47N60-F085; IRFPS43N50KPBF; IRFPS40N50LPBF; FCH47N60-F133; FCH077N65F-F155; SIHG47N60EF-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT56F60 Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1097804-APT56F60B2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1097804-APT56F60B2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1097804-APT56F60B2
Win Source Part Number: 1097804-APT56F60B2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: POWER MOS 8™ Package: Tube Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1040W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX™ [B2] Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FCH47N60-F085; IRFPS43N50KPBF; IRFPS40N50LPBF; FCH47N60-F133; FCH077N65F-F155; SIHG47N60EF-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT56F60 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1097804-APT56F60B2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: POWER MOS 8™
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1040W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FCH47N60-F085; IRFPS43N50KPBF; IRFPS40N50LPBF; FCH47N60-F133; FCH077N65F-F155; SIHG47N60EF-GE3;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT56F60
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT56F60B2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT56F60B2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT56F60B2
MOSFET N-CH 600V 60A T-MAX

MOSFET N-CH 600V 60A T-MAX

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1097804-APT56F60B2 APT56F60B2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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