Microchip Technology, Inc. Power FREDFET Transistor APT56F50L

Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
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Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
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Suppliers

Company
Product
Description
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Power FREDFET Transistor - APT56F50L - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT56F50L
Power FREDFET Transistor APT56F50L
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT56F50L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT56F50L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT56F50L
MOSFET N-CH 500V 56A TO264

MOSFET N-CH 500V 56A TO264

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APT56F50L APT56F50L
Product Name Power FREDFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Type Power FREDFET Transistor
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