MOSFET N-CH 500V 27A TO247 Product overview: APT5018BLLG from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 27A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 27A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT5018BLLG can be used for catalog matching and distributor lookup.
N-Channel 500V 27A (Tc) 300W (Tc) Through Hole TO-247 [B]
Manufacturer: Microchip Technology
Win Source Part Number: 907031-APT5018BLLG
Series: POWER MOS 7®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 500 V 27A (Tc) 300W (Tc) Through Hole TO-247 [B]
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-247 [B]
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 500V 27A TO247
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-APT5018BLLG | APT5018BLLG-ND | 907031-APT5018BLLG | APT5018BLLG |
| Product Name | 500V 27A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5018BLLG | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |
| MOSFET Operating Mode | Enhancement | |||
| PD | 300 milliwatts |