Microchip Technology, Inc. Power FREDFET Transistor APT37F50S

Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
Request a Quote Datasheet
Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power FREDFET Transistor - APT37F50S - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT37F50S
Power FREDFET Transistor APT37F50S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Supplier's Site
Single FETs, MOSFETs - APT37F50S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
APT37F50S-ND
Single FETs, MOSFETs APT37F50S-ND
N-Channel 500V 37A (Tc) 520W (Tc) Surface Mount D3Pak

N-Channel 500V 37A (Tc) 520W (Tc) Surface Mount D3Pak

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT37F50S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT37F50S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT37F50S
MOSFET N-CH 500V 37A D3PAK

MOSFET N-CH 500V 37A D3PAK

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number APT37F50S APT37F50S-ND APT37F50S
Product Name Power FREDFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Type Power FREDFET Transistor
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB821 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3SC065030D8S - Acme Chip Technology Co., Limited
Specs
Package Type 4-PowerTSFN
Packing Method Tape Reel; Tape & Reel (TR)
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SB857C-E - 855126-2SB857C-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details