Microchip Technology, Inc. Power FREDFET Transistor APT34F60B

Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
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Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
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Suppliers

Company
Product
Description
Supplier Links
Power FREDFET Transistor - APT34F60B - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT34F60B
Power FREDFET Transistor APT34F60B
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Supplier's Site
Single FETs, MOSFETs - APT34F60B-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
APT34F60B-ND
Single FETs, MOSFETs APT34F60B-ND
N-Channel 600V 36A (Tc) 624W (Tc) Through Hole TO-247 [B]

N-Channel 600V 36A (Tc) 624W (Tc) Through Hole TO-247 [B]

Buy Now Datasheet
Singapore
600V 36A MOSFET Transistor
278-APT34F60B
600V 36A MOSFET Transistor 278-APT34F60B
MOSFET N-CH 600V 36A TO247 Product overview: APT34F60B from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT34F60B can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 36A TO247 Product overview: APT34F60B from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT34F60B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT34F60B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT34F60B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT34F60B
MOSFET N-CH 600V 36A TO247

MOSFET N-CH 600V 36A TO247

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number APT34F60B APT34F60B-ND 278-APT34F60B APT34F60B
Product Name Power FREDFET Transistor Single FETs, MOSFETs 600V 36A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Type Power FREDFET Transistor
Package Type TO-247; TO-247 TO-247; TO-247-3 Tube TO-247; TO-247-3
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 600 volts
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