Microchip Technology, Inc. Single FETs, MOSFETs APT30M60J

Description
N-Channel 600V 31A (Tc) 355W (Tc) Chassis Mount ISOTOP®
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Description
N-Channel 600V 31A (Tc) 355W (Tc) Chassis Mount ISOTOP®
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - APT30M60J-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
APT30M60J-ND
Single FETs, MOSFETs APT30M60J-ND
N-Channel 600V 31A (Tc) 355W (Tc) Chassis Mount ISOTOP®

N-Channel 600V 31A (Tc) 355W (Tc) Chassis Mount ISOTOP®

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325273-APT30M60J - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325273-APT30M60J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325273-APT30M60J
Manufacturer: Microchip Technology Win Source Part Number: 1325273-APT30M60J Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 1 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 355W (Tc) Supplier Device Package: ISOTOP® Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 67 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: APT30M60 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: RoHS Compliant

Manufacturer: Microchip Technology
Win Source Part Number: 1325273-APT30M60J
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 1
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 355W (Tc)
Supplier Device Package: ISOTOP®
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 67
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: APT30M60
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT30M60J - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT30M60J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT30M60J
MOSFET N-CH 600V 31A ISOTOP

MOSFET N-CH 600V 31A ISOTOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number APT30M60J-ND 1325273-APT30M60J APT30M60J
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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