Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APT26M100JCU3

Description
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance ISOTOP Package (SOT-227) High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched mode power supplies
Request a Quote Datasheet
Description
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance ISOTOP Package (SOT-227) High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched mode power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide/Silicon Hybrid Modules - APT26M100JCU3 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APT26M100JCU3
Silicon Carbide/Silicon Hybrid Modules APT26M100JCU3
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance ISOTOP Package (SOT-227) High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched mode power supplies

Features

  • Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Very low stray inductance
  • ISOTOP Package (SOT-227)
  • High level of integration

Benefits

  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • RoHS compliant

Applications

  • AC and DC motor control
  • Switched mode power supplies
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT26M100JCU3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT26M100JCU3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT26M100JCU3
MOSFET N-CH 1000V 26A SOT227

MOSFET N-CH 1000V 26A SOT227

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APT26M100JCU3 APT26M100JCU3
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide
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