Microchip Technology, Inc. Single FETs, MOSFETs APT20M19JVR

APT20M19JVR is an N-channel enhancement mode power MOSFET designed for high-voltage switching applications. It is packaged in the SOT-227 (ISOTOP®) case, measuring 31.7 mm × 25.4 mm × 15.1 mm. The device has a drain-source breakdown voltage of 200 V, a continuous drain current of 112 A at 25°C, and a maximum on-state resistance of 0.019 Ω at Vₓₒ = 10 V. It supports a total power dissipation of 500 W and an avalanche current of 67 A with single-pulse avalanche energy up to 1300 mJ. The gate-source voltage ranges from -30 V to +30 V, with a gate threshold voltage of 2 to 4 V. The junction-to-case thermal resistance is 0.25 °C/W. The device is UL recognized, meets AEC-Q200, and is 100% avalanche tested. Its isolation voltage is 2500 V RMS.