The MMA015AA and MMA016AA devices are gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power-selectable wideband amplifier die that operates between DC and 14 GHz, and DC and 16 GHz, respectively. The amplifiers provide gains of 11 dB to 15 dB, and 13 dB to 16 dB, respectively. The MMA015AA provides 29 dBm OIP3 at the highest power option, while requiring only 80 mA from a 4 V supply. The MMA016AA yields 29 dBm P3dB at the highest power option, while also requiring only 80 mA from a 4 V supply. Gain flatness is excellent for both devices, varying less than 1 dB over the –40 °C to 85 °C temperature range, for the MMA015AA, and varying less than 1.4 dB over the –40 °C to 85 °C temperature range, for the MMA016AA Both of these devices are ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. Both the MMA015AA and MMA016AA amplifiers' I/Os are internally matched to 50Ω, facilitating easy integration into multi-chip modules (MCMs). Both device is available as a highly compact 0.5 mm² die.
Additional Features
GaAs MMIC power-selectable wideband amplifier, DC to 16 GHz
Excellent gain flatness
I/Os are internally matched to 50Ω
Ideal for EW, ECM, radar, and test equipment applications
Requires only 80 mA from a 4 V supply
MMA015AA provides 29 dBm OIP3 at the highest power option
MMA016AA yields 29 dBm P3dB at the highest power option
–40 °C to 85 °C temperature range
The MMA015AA and MMA016AA devices are gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power-selectable wideband amplifier die that operates between DC and 14 GHz, and DC and 16 GHz, respectively. The amplifiers provide gains of 11 dB to 15 dB, and 13 dB to 16 dB, respectively. The MMA015AA provides 29 dBm OIP3 at the highest power option, while requiring only 80 mA from a 4 V supply. The MMA016AA yields 29 dBm P3dB at the highest power option, while also requiring only 80 mA from a 4 V supply. Gain flatness is excellent for both devices, varying less than 1 dB over the –40 °C to 85 °C temperature range, for the MMA015AA, and varying less than 1.4 dB over the –40 °C to 85 °C temperature range, for the MMA016AA Both of these devices are ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. Both the MMA015AA and MMA016AA amplifiers' I/Os are internally matched to 50Ω, facilitating easy integration into multi-chip modules (MCMs). Both device is available as a highly compact 0.5 mm² die.
Additional Features
- GaAs MMIC power-selectable wideband amplifier, DC to 16 GHz
- Excellent gain flatness
- I/Os are internally matched to 50Ω
- Ideal for EW, ECM, radar, and test equipment applications
- Requires only 80 mA from a 4 V supply
- MMA015AA provides 29 dBm OIP3 at the highest power option
- MMA016AA yields 29 dBm P3dB at the highest power option
- –40 °C to 85 °C temperature range
