MMA142AA is a self-biased (requiring only a single positive supply, using on-chip choke), gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 1 GHz and 34 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 1 dB positive gain slope with a typical gain of 15 dB, 3 dB noise figure, 16 dBm of output power at 1 dB gain compression, and 28 dBm output IP3 at 18 GHz. The MMA142AA amplifier features RF I/Os that are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
Additional Features
GaAs MMIC distributed amplifier die, 1 GHz to 34 GHz.
1 dB positive gain slope with a typical gain of 15 dB
16 dBm of output power at 1 dB gain compression
RF I/Os internally matched to 50 Ω,
MMA142AA is a self-biased (requiring only a single positive supply, using on-chip choke), gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 1 GHz and 34 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 1 dB positive gain slope with a typical gain of 15 dB, 3 dB noise figure, 16 dBm of output power at 1 dB gain compression, and 28 dBm output IP3 at 18 GHz. The MMA142AA amplifier features RF I/Os that are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
Additional Features
- GaAs MMIC distributed amplifier die, 1 GHz to 34 GHz.
- 1 dB positive gain slope with a typical gain of 15 dB
- 16 dBm of output power at 1 dB gain compression
- RF I/Os internally matched to 50 Ω,
