The TPR 700 is a high-power common-base bipolar transistor designed for pulsed operation at 1030-1090 MHz, delivering 700 W output power with 150 W input power and 6.7 dB power gain. It operates with a 50 V collector supply voltage and maintains 35% collector efficiency under 10 ms pulse width and 1% duty factor conditions. The device features a 55KT, Style 1 package with gold thin-film metallization, 0.08 °C/W thermal resistance, and a 200 °C maximum junction temperature. It tolerates a 30:1 load mismatch and has a rise time of 70 ns. Collector-to-base breakdown voltage is 65 V, and emitter-to-base breakdown voltage is 3.5 V.
The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input returns for fast rise time. Low thermal resistance package reduces junction temperature, extends life.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 80-TPR700 |
| Product Name | RF Power Transistor |
| Power Gain | 6.7 dB |
