The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metallization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 80-MDS800 |
| Product Name | RF Power Transistor |
| Power Gain | 8.6 dB |
