The MDS800 is a high-power common-base bipolar transistor designed for pulsed avionics applications at 1090 MHz, specifically for MODE-S systems. It features gold thin-film metalization and emitter ballasting for high MTTF, with input and output prematch for broadband operation. The device is packaged in a 55ST-1 case with low thermal resistance of 0.12 °C/W, enabling an operating junction temperature up to +200 °C. It delivers 800 W output power at 50 V collector voltage, with 8.6 dB power gain, 40% collector efficiency, and tolerance to a 4.0:1 VSWR load mismatch under 128 µs burst conditions at 2% LTDF.
The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metallization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 80-MDS800 |
| Product Name | RF Power Transistor |
| Power Gain | 8.6 dB |
