Microchip Technology, Inc. 64 Kb I2C Serial EERAM 47L64

Description
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 8,192 x 8 bit Serial SRAM with internal nonvolatile data backup I2C Interface: Up to 3MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package; 8-DFN (2x3mm) package
Description
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 8,192 x 8 bit Serial SRAM with internal nonvolatile data backup I2C Interface: Up to 3MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package; 8-DFN (2x3mm) package
Datasheet
Datasheet Summary
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The 47L64 is a 64-Kbit I²C serial EERAM with an 8,192 × 8-bit SRAM array and hidden EEPROM backup for nonvolatile data retention. It operates from 2.7V to 3.6V and supports I²C communication at 1MHz, 400kHz, and 100kHz with Schmitt trigger inputs for noise suppression. The device automatically saves SRAM data to EEPROM on power-down and restores it on power-up using an external 10µF to 50µF capacitor connected to VCAP. It requires no user intervention for backup operations and offers 100,000 minimum restore cycles with 100-year data retention at 55°C. Operating temperature range is -40°C to +85°C. The part is available in 8-lead SOIC and 8-lead TDFN packages with an exposed thermal pad.

Datasheet Summary
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The 47L64 is a 64-Kbit I²C serial EERAM with an 8,192 × 8-bit SRAM array and hidden EEPROM backup for nonvolatile data retention. It operates from 2.7V to 3.6V and supports I²C communication at 1MHz, 400kHz, and 100kHz with Schmitt trigger inputs for noise suppression. The device automatically saves SRAM data to EEPROM on power-down and restores it on power-up using an external 10µF to 50µF capacitor connected to VCAP. It requires no user intervention for backup operations and offers 100,000 minimum restore cycles with 100-year data retention at 55°C. Operating temperature range is -40°C to +85°C. The part is available in 8-lead SOIC and 8-lead TDFN packages with an exposed thermal pad.

Suppliers

Company
Product
Description
Supplier Links
64 Kb I2C Serial EERAM - 47L64 - Microchip Technology, Inc.
Chandler, AZ, United States
64 Kb I2C Serial EERAM
47L64
64 Kb I2C Serial EERAM 47L64
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 8,192 x 8 bit Serial SRAM with internal nonvolatile data backup I2C Interface: Up to 3MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package; 8-DFN (2x3mm) package

EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.

Additional Features

  • 8,192 x 8 bit Serial SRAM with internal nonvolatile data backup
  • I2C Interface: Up to 3MHz with Schmitt trigger inputs for noise suppression
  • Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum)
  • Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
  • Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, SRAM automatically restored on VCC return
  • 100,000 Backups Minimum (at 20°C)
  • 100 years retention (at 20°C)
  • Operating Voltage Range: 2.7V-3.6V
  • Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC
  • 8-SOIC (150mil wide) package; 8-DFN (2x3mm) package
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Transistors
Product Number 47L64
Product Name 64 Kb I2C Serial EERAM
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