The 2N7000 is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It has a drain-to-source breakdown voltage of 60 V, a gate threshold voltage range of 0.8 V to 3 V, and a static drain-to-source on-resistance of up to 5 Ω at 10 V gate voltage. The device features an integral source-drain diode, high input impedance, and thermal stability across an operating ambient temperature range of -55°C to +150°C. Its package has a thermal resistance of 132 °C/W when mounted on an FR4 board. The part meets RoHS compliance and is Pb-free.
2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N7000 |
| Product Name | N-Channel Enhancement-Mode Vertical DMOS FET |
| Polarity | N-Channel |
