Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000-G 2N7000-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 109791-2N7000-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200mA (Tj) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Microchip Technology Win Source Part Number: 109791-2N7000-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200mA (Tj) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000-G - 109791-2N7000-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000-G
109791-2N7000-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000-G 109791-2N7000-G
Manufacturer: Microchip Technology Win Source Part Number: 109791-2N7000-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200mA (Tj) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 109791-2N7000-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA (Tj)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 1779588 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1779588
MOSFETs 1779588
MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V,

MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V,

Supplier's Site
MOSFETs - 1779760 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1779760
MOSFETs 1779760
MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V,

MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V,

Supplier's Site
MOSFETs - 1779760P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1779760P
MOSFETs 1779760P
MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V,

MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V,

Supplier's Site
Single FETs, MOSFETs - 2N7000-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7000-G-ND
Single FETs, MOSFETs 2N7000-G-ND
N-Channel 60V 200mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 60V 200mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
2N7000-G
MOSFET 2N7000-G
MOSFET 60V 5Ohm

MOSFET 60V 5Ohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7000-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7000-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7000-G
MOSFET N-CH 60V 200MA TO92-3

MOSFET N-CH 60V 200MA TO92-3

Supplier's Site
Mosfet, N-Ch, 60V, 0.2A, To-92; Transistor Polarity Microchip - 31AC2702 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.2A, To-92; Transistor Polarity Microchip
31AC2702
Mosfet, N-Ch, 60V, 0.2A, To-92; Transistor Polarity Microchip 31AC2702
MOSFET, N-CH, 60V, 0.2A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.2A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - 2N7000-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2N7000-G
Single FETs, MOSFETs 2N7000-G
MOSFET N-CH 60V 200MA TO92-3

MOSFET N-CH 60V 200MA TO92-3

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 109791-2N7000-G 1779588 1779760P 2N7000-G-ND 2N7000-G 2N7000-G 31AC2702 2N7000-G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000-G MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 0.2A, To-92; Transistor Polarity Microchip Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-92; SOT3; TO-92-3 TO-92; To-92 TO-92; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA)
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