Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays 2N5796

Description
Win Source Part Number: 1377442-2N5796 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Temperature Range - Operating: -65°C ~ 175°C (TJ) Fake Threat In the Open Market: 37 pct. Mfr: Microchip Technology Package: Bulk Product Status: Active Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6 Base Product Number: 2N579 Mounting Type: Through Hole HTSUS: 8541.21.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) Power - Max: 500mW
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Description
Win Source Part Number: 1377442-2N5796 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Temperature Range - Operating: -65°C ~ 175°C (TJ) Fake Threat In the Open Market: 37 pct. Mfr: Microchip Technology Package: Bulk Product Status: Active Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6 Base Product Number: 2N579 Mounting Type: Through Hole HTSUS: 8541.21.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) Power - Max: 500mW
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays - 1377442-2N5796 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
1377442-2N5796
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays 1377442-2N5796
Win Source Part Number: 1377442-2N5796 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Temperature Range - Operating: -65°C ~ 175°C (TJ) Fake Threat In the Open Market: 37 pct. Mfr: Microchip Technology Package: Bulk Product Status: Active Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6 Base Product Number: 2N579 Mounting Type: Through Hole HTSUS: 8541.21.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) Power - Max: 500mW

Win Source Part Number: 1377442-2N5796
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Temperature Range - Operating: -65°C ~ 175°C (TJ)
Fake Threat In the Open Market: 37 pct.
Mfr: Microchip Technology
Package: Bulk
Product Status: Active
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Base Product Number: 2N579
Mounting Type: Through Hole
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
Power - Max: 500mW

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Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5796
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5796
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NPN TRANSISTOR

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 1377442-2N5796 2N5796
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP
Package Type SOT3 TO-78-6
TJ -65 to 175 C (-85 to 347 F)
Power Gain 100 dB
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