Bipolar (BJT) Transistor
Win Source Part Number: 1377442-2N5796
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Temperature Range - Operating: -65°C ~ 175°C (TJ)
Fake Threat In the Open Market: 37 pct.
Mfr: Microchip Technology
Package: Bulk
Product Status: Active
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Base Product Number: 2N579
Mounting Type: Through Hole
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
Power - Max: 500mW
NPN TRANSISTOR
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | 2N5796MS-ND | 1377442-2N5796 | 2N5796 |
| Product Name | Bipolar Transistor Arrays | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP | |
| Package Type | TO-78-6 Metal Can | SOT3 | TO-78-6 |
| TJ | -65 to 175 C (-85 to 347 F) | ||
| Power Gain | 100 dB |
