Microchip Technology, Inc. Bipolar Transistor Arrays 2N5795AU/TR

Dual PNP silicon transistor for general-purpose switching and amplification, housed in a 6-pin surface-mount TO-78 package. Maximum collector-emitter voltage is 60 Vdc, collector current is 600 mAdc, and total power dissipation is 0.6 W at 25°C. Operating and storage junction temperature range is -65°C to +175°C. Current gain (hFE) ranges from 40 to 150 at collector currents of 100 µA to 300 mA. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current. Device is qualified per MIL-PRF-19500/496.