Microchip Technology, Inc. TRANSISTORS - RF Transistors (BJT) - 2N5630 2N5630

Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036411-2N5630 Packaging: Bulk Number of Pins: 3 Categories: RF Transistors(BJT) Popularity: Low Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Shortage Mount: Through Hole RoHS: Compliant Radiation Hardening: No Max Power Dissipation: 200 W Collector Emitter Voltage (VCEO): 120 V Max Collector Current: 16 A
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Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036411-2N5630 Packaging: Bulk Number of Pins: 3 Categories: RF Transistors(BJT) Popularity: Low Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Shortage Mount: Through Hole RoHS: Compliant Radiation Hardening: No Max Power Dissipation: 200 W Collector Emitter Voltage (VCEO): 120 V Max Collector Current: 16 A
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - 2N5630 - 1036411-2N5630 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2N5630
1036411-2N5630
TRANSISTORS - RF Transistors (BJT) - 2N5630 1036411-2N5630
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036411-2N5630 Packaging: Bulk Number of Pins: 3 Categories: RF Transistors(BJT) Popularity: Low Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Shortage Mount: Through Hole RoHS: Compliant Radiation Hardening: No Max Power Dissipation: 200 W Collector Emitter Voltage (VCEO): 120 V Max Collector Current: 16 A

Manufacturer: Microchip Technology
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1036411-2N5630
Packaging: Bulk
Number of Pins: 3
Categories: RF Transistors(BJT)
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Shortage
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Max Power Dissipation: 200 W
Collector Emitter Voltage (VCEO): 120 V
Max Collector Current: 16 A

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Singapore
Bipolar Transistor
276-2N5630
Bipolar Transistor 276-2N5630
POWER BJT Product overview: 2N5630 from Microchip Technology is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5630 can be used for catalog matching and distributor lookup.

POWER BJT Product overview: 2N5630 from Microchip Technology is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5630 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5630
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5630
POWER BJT

POWER BJT

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1036411-2N5630 276-2N5630 2N5630
Product Name TRANSISTORS - RF Transistors (BJT) - 2N5630 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type TO-3; SOT3 Bulk
Packing Method Bulk; Bulk Bulk Bulk; Bulk
PD 200000 milliwatts 200000 milliwatts
Output Power ? to 200 watts
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