Microchip Technology, Inc. Single Bipolar Transistors 2N5039

The 2N5039 is an NPN high power silicon transistor designed for high current switching applications. It is packaged in a TO-3 case and has a collector-emitter voltage rating of 75 Vdc, a collector-base voltage of 125 Vdc, and an emitter-base voltage of 7.0 Vdc. The device can handle a continuous collector current up to 20 Adc and dissipates up to 140 W at 25°C, with derating of 800 mW/°C above that temperature. Thermal resistance from junction to case is 1.25°C/W. Current gain (hFE) ranges from 30 to 150 at collector currents of 0.5 A to 2.0 A. Collector-emitter saturation voltage is 1.0 V at 10 A collector current and 1.0 A base current. The transistor is qualified to MIL-PRF-19500/439 and operates from -65°C to +200°C.