Microchip Technology, Inc. JFETs 2N4861UB

Description
JFET N-CH 30V UB
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Description
JFET N-CH 30V UB
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Datasheet
Datasheet Summary
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N-channel JFET with a drain-source voltage rating of 30 V, a gate-source breakdown voltage of -30 V, and a maximum power dissipation of 1.8 W at 25°C. Housed in a TO-18 (TO-206AA) package, it operates over a junction and storage temperature range of -65°C to +200°C. Qualified per MIL-PRF-19500/385. Gate-source_off state voltage ranges from -0.8 V to -4.0 V, with a drain current of 8.0 to 80 mA at V_GS = 0 V and V_DS = 15 V. Static drain-source on-state resistance is 60 Ω, and the small-signal reverse transfer capacitance is 8.0 pF at V_GS = -10 V and f = 1.0 MHz.

Datasheet Summary
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N-channel JFET with a drain-source voltage rating of 30 V, a gate-source breakdown voltage of -30 V, and a maximum power dissipation of 1.8 W at 25°C. Housed in a TO-18 (TO-206AA) package, it operates over a junction and storage temperature range of -65°C to +200°C. Qualified per MIL-PRF-19500/385. Gate-source_off state voltage ranges from -0.8 V to -4.0 V, with a drain current of 8.0 to 80 mA at V_GS = 0 V and V_DS = 15 V. Static drain-source on-state resistance is 60 Ω, and the small-signal reverse transfer capacitance is 8.0 pF at V_GS = -10 V and f = 1.0 MHz.

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JFETs - 150-2N4861UB-ND - DigiKey
Thief River Falls, MN, United States
JFET N-CH 30V UB

JFET N-CH 30V UB

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 150-2N4861UB-ND
Product Name JFETs
Polarity N-Channel
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