Microchip Technology, Inc. Single Bipolar Transistors 2N3700AUB

The 2N3700 is a low-power NPN silicon transistor in a hermetically sealed TO-18 metal package, designed for high-reliability military and industrial applications. It has a collector-emitter voltage rating of 80 V, a collector current of 1.0 A, and a total power dissipation of 0.5 W at 25 °C ambient temperature. The device features a thermal impedance junction-to-ambient of 325 °C/W and junction-to-case of 150 °C/W. Its forward-current transfer ratio ranges from 15 to 300 depending on collector current, and it has an emitter-base voltage rating of 7.0 V. The transistor is qualified to MIL-PRF-19500/391 standards and is available in RoHS-compliant versions for commercial grade. The UB package variant is a surface-mount version of the TO-18 package, with dimensions specified for lead spacing and body contour. The collector is internally connected to the case, and the part number is JEDEC registered.