The 2N3439 is an NPN silicon bipolar junction transistor designed for high-frequency switching in medium power applications, including military and high-reliability systems. It is available in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel cap, measuring 7.75-8.51 mm in diameter and 12.70-19.05 mm in lead length. Maximum ratings include a collector-emitter voltage of 350 V, a collector current of 1.0 A, and a total power dissipation of 0.8 W at 25°C. The collector-emitter saturation voltage is 0.5 V at a collector current of 50 mA and base current of 4.0 mA. Turn-on and turn-off times are 1.0 µs and 10 µs max, respectively, under specified test conditions. It meets MIL-PRF-19500/368 qualifications and is RoHS compliant in commercial versions.
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Bag Product overview: 2N3439 from Microchip Technology is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 1A, 800mW. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 1A, 800mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3439 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N3439 |
| Product Name | 350V 1A 800mW Bipolar Transistor |
| Polarity | NPN |
| Package Type | Bag |
| Packing Method | Bag |
| IC(max) | 1000 milliamps |
