Microchip Technology, Inc. Single Bipolar Transistors 2N3250AUB

PNP silicon low-power transistor in TO-39 (TO-205AD) package with a collector-emitter voltage rating of 60 Vdc, collector current of 200 mAdc, and power dissipation of 0.36 W at +25°C. The junction temperature ranges from -65°C to +200°C. Thermal resistance from junction to case is 150 °C/W. Forward current transfer ratio (hFE) ranges from 40 to 150 depending on collector current. The device is qualified per MIL-PRF-19500/323 and features a collector internally connected to the case.