Microchip Technology, Inc. Single Bipolar Transistors 2N2907AUBP/TR

Pnp silicon transistor in a surface mount UB package, rated for 60 V collector-emitter voltage and 600 mA collector current, with a maximum power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65°C to +200°C. Qualified per MIL-PRF-19500/291. Pin configuration: lead 1 = emitter, lead 2 = base, lead 3 = collector. Forward current transfer ratio ranges from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 1.6 V at 500 mA collector current and 50 mA base current. The device meets MIL-PRF-19500/291 qualification standards.