Microchip Technology, Inc. Single Bipolar Transistors 2N2907AP

PNP silicon transistor for general-purpose switching and amplification, housed in a TO-18 package with a height of 5.84 mm maximum and lead spacing defined by the TO-206AA standard. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. The device operates from -65°C to +200°C and meets MIL-PRF-19500/291 quality standards. Forward current gain ranges from 40 to 300 depending on collector current, with collector-emitter saturation voltage up to 1.6 V at 500 mA collector current. Base-emitter saturation voltage is specified up to 2.6 V under high-current conditions. Input and output capacitances are 30 pF and 8 pF respectively. The part is qualified per MIL-PRF-19500/291, and while the exact suffix for 2N2907AP is not specified, the characteristics align with the 2N2907A series.