Microchip Technology, Inc. Single Bipolar Transistors 2N2604UB/TR

The 2N2604UB is a PNP silicon low-power transistor in a TO-46 package with a total power dissipation of 400 mW at +25°C ambient temperature. It has a collector-base voltage rating of 80 Vdc, a collector-emitter voltage rating of 60 Vdc, and a collector current limit of 30 mAdc. The device operates over a junction temperature range of -65 to +200°C. The forward-current transfer ratio ranges from 40 to 120 at 10 μA collector current and 5 V collector-emitter voltage. The collector-emitter saturation voltage is 0.3 Vdc at 10 mA collector current and 500 μA base current. The transistor has a thermal resistance from junction to ambient of 275°C/mW. The emitter-base cutoff current is 2.0 nAdc at 5.0 V emitter-base voltage. The output capacitance is 6.0 pF. The device is qualified per MIL-PRF-19500/354.