Microchip Technology, Inc. Single Bipolar Transistors 2N2432UB/TR

NPN silicon low-power transistor in TO-18 package with a collector-emitter voltage rating of 30 Vdc and a collector current of 100 mAdc. The device meets MIL-PRF-19500/313 qualifications and has a junction temperature range of -65 to +200 °C. Thermal resistance from junction to solder pads is 95 °C/W for the UB package variant. Maximum power dissipation is 360 mW. Input and output capacitances are each 12 pF at 100 kHz to 1 MHz. Forward current transfer ratio ranges from 80 to 400 at an collector current of 1.0 mA and collector-emitter voltage of 5.0 Vdc. Collector-emitter saturation voltage is 0.15 Vdc at 10 mA collector current and 0.5 mA base current.