Win Source Part Number: 1380714-2N1486
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 55 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 750mV @ 40mA, 750A
Current - Collector Cutoff (Max): 15µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 750mA, 4V
Mounting Type: Through Hole
Package / Case: TO-233AA, TO-8-3 Metal Can
Supplier Device Package: TO-8
Temperature Range - Operating: -65°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: 2N1486
RoHS Status: RoHS non-compliant
Standard Package: 1 pcs
Bipolar (BJT) Transistor NPN 55V 3A 1.75W Through Hole TO-8
TRANS NPN 55V 3A TO8
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 1380714-2N1486 | 2N1486-ND | 2N1486 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | |
| Package Type | SOT3 | TO-8; TO-233AA, TO-8-3 Metal Can | |
| IC(max) | 3000 milliamps | 3000 milliamps | |
| Power Gain | 35 dB |
