Microchip Technology, Inc. Single Diodes 1N5809US

Description
DIODE GEN PURP 100V 3A B SQ-MELF
Request a Quote Datasheet
Description
DIODE GEN PURP 100V 3A B SQ-MELF
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Diodes - 1N5809US - ODG (Origin Data Global)
Shenzhen, China
Single Diodes
1N5809US
Single Diodes 1N5809US
DIODE GEN PURP 100V 3A B SQ-MELF

DIODE GEN PURP 100V 3A B SQ-MELF

Supplier's Site Datasheet
Single Diodes - 1N5809US-ND - DigiKey
Thief River Falls, MN, United States
Single Diodes
1N5809US-ND
Single Diodes 1N5809US-ND
Diode Standard 100V 3A Surface Mount B, SQ-MELF

Diode Standard 100V 3A Surface Mount B, SQ-MELF

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - Single - 983353-1N5809US - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Diodes - Rectifiers - Single
983353-1N5809US
Discrete Semiconductor Products - Diodes - Rectifiers - Single 983353-1N5809US
Win Source Part Number: 983353-1N5809US Category: Discrete Semiconductor Products>Diodes - Rectifiers - Single Speed: Fast Recovery =< 500ns, > 200mA (Io) Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Operating Temperature - Junction: -65°C ~ 175°C Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.10.0080 Mfr: Microchip Technology Base Product Number: 1N5809 RoHS Status: RoHS non-compliant

Win Source Part Number: 983353-1N5809US
Category: Discrete Semiconductor Products>Diodes - Rectifiers - Single
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.10.0080
Mfr: Microchip Technology
Base Product Number: 1N5809
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - 1N5809US - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - Rectifiers
1N5809US
Discrete Semiconductor Products - Diodes - Rectifiers 1N5809US
DIODE GEN PURP 100V 3A B SQ-MELF

DIODE GEN PURP 100V 3A B SQ-MELF

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category General Purpose Diodes Diodes Diodes Rectifiers
Product Number 1N5809US 1N5809US-ND 983353-1N5809US 1N5809US
Product Name Single Diodes Single Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single Discrete Semiconductor Products - Diodes - Rectifiers
Package MELF; SQ-MELF, B
VF 0.8750 volts 0.8750 volts 0.8750 volts
IR 0.0050 mA 0.0050 mA
VR 100 volts 100 volts
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