The 1N5297 is a current regulator diode in a hermetically sealed glass DO-7 package, designed to maintain a regulated current of 1.00 mA with a tolerance of ±10% over a broad voltage range. It has a maximum working peak voltage of 100 V, a steady-state power dissipation of 500 mW at 50°C, and a junction-to-lead thermal resistance of 250 °C/W. The device operates within a junction and storage temperature range of -65°C to +175°C and is available in JAN, JANTX, JANTXV, and JANS reliability levels per MIL-PRF-19500/463. The physical dimensions include a body diameter of 0.060 to 0.107 inch and lead length of 1.000 to 1.500 inch. It is inherently radiation hard and non-sensitive to ESD.
DIODE CUR REG 100V 1.1MA 475MW Product overview: 1N5297 from Microchip Technology is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.1MA, 475MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 1.1MA, 475MW, Bipolar Transistor, Current Regulation - Diodes, Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 1164-1N5297 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 1164-1N5297 |
| Product Name | 100V 1.1MA 475MW Bipolar Transistor |
| Package Type | Bulk |
