SIL03N10A-TP is an N-channel MOSFET in a SOT23-6L package, designed for switching applications. It has a drain-source voltage rating of 100 V and a continuous drain current of 2.4 A at 70°C. The device features a typical on-resistance of 120 mΩ at 10 V gate-source voltage and 140 mΩ at 4.5 V gate-source voltage, with a gate threshold voltage range of 1.1 to 3.0 V. The junction temperature operates from -55°C to +150°C, with a thermal resistance of 73°C/W. The epoxy meets UL 94 V-0 flammability rating, and the product is RoHS compliant and halogen-free. The part includes a body diode with a forward voltage of 1.2 V and reverse recovery time of 32 ns. Capacitance values are 897 pF input, 31 pF output, and 29 pF reverse transfer. Total gate charge is 23.5 nC, with turn-on delay of 8.2 ns and turn-off delay of 22.5 ns.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-SIL03N10A-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |