Micro Commercial Components Corp. Single FETs, MOSFETs SICW280N120A-BP

SICW280N120A is a silicon carbide N-channel MOSFET designed for high-voltage applications such as solar inverters, power factor correction, and motor drives. It is packaged in a TO-247AB case with dimensions of 20.70 to 21.30 mm in length, 16.25 to 16.85 mm in lead spacing, and 19.62 to 20.22 mm in height. The device supports a maximum drain-source voltage of 1200 V, with a continuous drain current of 10 A at 25°C and 7.6 A at 100°C, and a pulsed drain current of 40 A. It has a typical on-resistance of 280 mΩ at 18 V gate-source voltage and 5 A drain current, a junction-to-case thermal resistance of 1.55°C/W, and operates from -55°C to +175°C. The gate-source voltage rating is -3 V to +18 V for normal operation, with a maximum of -5 V to +22 V. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating.