Micro Commercial Components Corp. Single FETs, MOSFETs SICW100N065H4-BP

SICW100N065H4 is a silicon carbide N-channel MOSFET in a TO-247-4 package, designed for high-efficiency switching applications such as solar inverters, uninterruptible power supplies, and motor drives. It has a drain-source voltage rating of 650 V, a continuous drain current of 22 A at Tc=110°C, and a typical thermal resistance junction-to-case of 0.9°C/W. The device operates with a junction temperature range of -55°C to +175°C and meets RoHS compliance. It features low on-resistance of 130 mΩ at 175°C, fast switching with turn-on and turn-off energies of 6.2 µJ and 9.1 µJ respectively, and an avalanche energy rating of 800 mJ. The package dimensions comply with standard TO-247-4 mechanical specifications.