Dual N- and P-channel MOSFET in SOT-363S package, rated for ±20 V drain-source voltage and ±12 V gate-source voltage, with a maximum continuous drain current of 0.75 A (N-channel) and -0.6 A (P-channel) at 25°C, and 0.47 A and -0.38 A at 100°C. Total power dissipation is 325 mW with thermal resistance of 385°C/W. Junction and storage temperature range is -55°C to +150°C. RoHS compliant and halogen-free. Pulsed drain current is 3 A (N-channel) and -2.4 A (P-channel).
DUAL N/P-CHANNEL MOSFET,SOT-363S
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-SI3439KDWAS-TPTR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 6-TSSOP, SC-88, SOT-363 |
