P-channel MOSFET in a DFN1006-3A surface-mount package measuring 0.65mm x 0.55mm, designed for low-voltage switching applications. It has a drain-source voltage rating of -20V, a continuous drain current of -0.5A at 25°C, and a maximum power dissipation of 0.9W. The gate-source voltage is rated at ±12V, with a gate-threshold voltage range of -0.35V to -1.2V. On-resistance is 620mΩ at -4.5V gate drive and -500mA drain current, rising to 1200mΩ under lower gate drive conditions. The device features ESD protection up to 2kV (HBM), is halogen-free and RoHS compliant, meets UL 94 V-0 flammability rating, and operates from -55°C to +150°C junction temperature. Thermal resistance is 140°C/W junction-to-ambient.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-SI3139KL3C-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel |