Dual P-channel MOSFET in SOT-363S package, designed for low-voltage switching applications. The device has a drain-source voltage rating of -20 V, continuous drain current of -0.6 A at 25°C, and a maximum power dissipation of 0.32 W. Thermal resistance is 385°C/W junction to ambient. On-resistance ranges from 0.63 Ω to 2 Ω depending on gate bias. The package measures 2.00 to 2.20 mm in length, 1.15 to 1.35 mm in width, and 0.80 to 1.00 mm in height. It features ESD HBM Class 2 protection, is halogen-free and RoHS compliant, and operates over a junction temperature range of -55°C to +150°C. Moisture sensitivity level is 1, and epoxy meets UL 94 V-0 flammability rating.
DUAL P-CHANNEL MOSFET,SOT-363S
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-SI3139KDWAS-TPTR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 6-TSSOP, SC-88, SOT-363 |