Micro Commercial Components Corp. FET, MOSFET Arrays SI3134KDWAS-TPQ2

The SI3134KDWAS is a dual N-channel MOSFET in a SOT-363S package, designed for low-voltage switching applications. It has a drain-source voltage rating of 20 V and a continuous drain current of 0.75 A at 25°C, reducing to 0.47 A at 100°C. The device features a trench LV MOSFET structure with a typical on-resistance of 300 mΩ at 4.5 V gate drive and 400 mΩ at 2.5 V. Thermal resistance is 470°C/W, with an operating junction temperature range of -55°C to +150°C. The package is moisture sensitive level 1, halogen-free, and RoHS compliant. Maximum power dissipation is 0.26 W. The SOT-363S dimensions are 1.15-1.35 mm wide, 2.00-2.20 mm long, and 1.80-2.20 mm high. Total gate charge is 2.2 nC, with input, output, and reverse transfer capacitance of 28 pF, 9.5 pF, and 4.6 pF respectively. ESD HBM rating is Class 2.