Micro Commercial Components Corp. Single FETs, MOSFETs SI2305CHE3-TP

The SI2305CHE3 is a P-channel MOSFET in a SOT-23 package, rated for a drain-source voltage of -20 V and a continuous drain current of -5.4 A at 25°C, reducing to -3.4 A at 100°C. It features a maximum power dissipation of 1.3 W, a junction-to-ambient thermal resistance of 100°C/W, and operates from -55°C to +150°C. The device is AEC-Q101 qualified, RoHS compliant, and meets UL 94 V-0 flammability standards. Its on-resistance is 30 to 40 mΩ at -4.5 V gate drive and -5.4 A drain current. Total gate charge is 10.5 nC, with gate-source charge of 1.52 nC and gate-drain charge of 2.42 nC. Switching times include a turn-on delay of 7.5 ns, rise time of 14 ns, turn-off delay of 40 ns, and fall time of 20 ns. Input, output, and reverse transfer capacitances are 770 pF, 115 pF, and 98 pF respectively at 10 V drain-source voltage.