P-channel MOSFET in SOT-23 package, rated for -20 V drain-source voltage and ±8 V gate-source voltage, with a continuous drain current of -0.7 A at 25°C and -0.44 A at 100°C. Maximum power dissipation is 1.0 W. Junction temperature range is -55°C to +150°C. Thermal resistance is 122°C/W. Features ESD protection up to 2 kV (HBM), is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. On-resistance is 470 mΩ at -4.5 V gate voltage and -500 mA drain current, increasing to 1200 mΩ at -1.8 V. Gate charge is 1.24 nC, with turn-on rise time of 19 ns and turn-off fall time of 647 ns under standard test conditions.
P-CHANNEL MOSFET, SOT-23
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-SI01P02K-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel |