Micro Commercial Components Corp. Single FETs, MOSFETs SI01N03K-TP

N-channel MOSFET in SOT-23 package, designed for low-voltage switching applications. The device has a 30 V drain-source breakdown voltage, continuous drain current of 0.8 A at 25°C and 0.51 A at 100°C, and power dissipation of 1 W. Thermal resistance is 125°C/W junction to ambient. Gate-source voltage rating is ±12 V. Package dimensions are 2.80-3.04 mm length, 2.10-2.64 mm width, and 1.20-1.40 mm height. It meets UL 94 V-0 flammability rating, is RoHS compliant, and has ESD protection up to 2 kV HBM. Operating junction temperature ranges from -55°C to +150°C. The 'TP' suffix indicates tape and reel packaging with 3,000 pcs per reel.