NPN silicon transistor in TO-92 package with a collector current of 0.5 A, collector-base voltage of 40 V, and power dissipation of 0.625 W at 25°C. Operating and storage junction temperature range is -55°C to +150°C. DC current gain (hFE) ranges from 144 to 202 for the H classification. Collector-emitter saturation voltage is up to 0.6 V at 500 mA collector current and 50 mA base current. Transistor frequency is 150 MHz. Epoxy meets UL 94 V-0 flammability rating and is RoHS compliant. Package is through-hole TO-92 with straight leads and bulk packing.
Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-S9013-H-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |