Micro Commercial Components Corp. Single Bipolar Transistors S9013-H-BP

Description
Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 625mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 625mW Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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NPN silicon transistor in TO-92 package with a collector current of 0.5 A, collector-base voltage of 40 V, and power dissipation of 0.625 W at 25°C. Operating and storage junction temperature range is -55°C to +150°C. DC current gain (hFE) ranges from 144 to 202 for the H classification. Collector-emitter saturation voltage is up to 0.6 V at 500 mA collector current and 50 mA base current. Transistor frequency is 150 MHz. Epoxy meets UL 94 V-0 flammability rating and is RoHS compliant. Package is through-hole TO-92 with straight leads and bulk packing.

Datasheet Summary
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NPN silicon transistor in TO-92 package with a collector current of 0.5 A, collector-base voltage of 40 V, and power dissipation of 0.625 W at 25°C. Operating and storage junction temperature range is -55°C to +150°C. DC current gain (hFE) ranges from 144 to 202 for the H classification. Collector-emitter saturation voltage is up to 0.6 V at 500 mA collector current and 50 mA base current. Transistor frequency is 150 MHz. Epoxy meets UL 94 V-0 flammability rating and is RoHS compliant. Package is through-hole TO-92 with straight leads and bulk packing.

Suppliers

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Single Bipolar Transistors - 353-S9013-H-BP-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
353-S9013-H-BP-ND
Single Bipolar Transistors 353-S9013-H-BP-ND
Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 625mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 625mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-S9013-H-BP-ND
Product Name Single Bipolar Transistors
Polarity NPN
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