Micro Commercial Components Corp. Bipolar Transistors - BJT MPSA55-AP

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Bipolar Transistors - BJT 500mA 80V
Description
Bipolar Transistors - BJT 500mA 80V
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The MPSA55 is a PNP silicon avalanche transistor in a TO-92 package with a collector current rating of 500 mA and a collector-emitter voltage rating of 80 V. It dissipates 625 mW at 25°C, derating at 5.0 mW/°C, or 1.5 W with a heatsink, derating at 12 mW/°C. Junction and storage temperatures range from -55°C to +150°C. The DC current gain hFE is a minimum of 100 at 10 mA and 100 mA collector current. Collector-emitter saturation voltage is 0.25 V at 100 mA collector and 10 mA base current. Base-emitter saturation voltage is 1.2 V under the same conditions. Current gain-bandwidth product is 50 MHz. The package meets UL 94 V-0 and is RoHS compliant with the "P" suffix. Moisture sensitivity level is 1.

Datasheet Summary
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The MPSA55 is a PNP silicon avalanche transistor in a TO-92 package with a collector current rating of 500 mA and a collector-emitter voltage rating of 80 V. It dissipates 625 mW at 25°C, derating at 5.0 mW/°C, or 1.5 W with a heatsink, derating at 12 mW/°C. Junction and storage temperatures range from -55°C to +150°C. The DC current gain hFE is a minimum of 100 at 10 mA and 100 mA collector current. Collector-emitter saturation voltage is 0.25 V at 100 mA collector and 10 mA base current. Base-emitter saturation voltage is 1.2 V under the same conditions. Current gain-bandwidth product is 50 MHz. The package meets UL 94 V-0 and is RoHS compliant with the "P" suffix. Moisture sensitivity level is 1.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPSA55-AP
Bipolar Transistors - BJT MPSA55-AP
Bipolar Transistors - BJT 500mA 80V

Bipolar Transistors - BJT 500mA 80V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPSA55-AP
Product Name Bipolar Transistors - BJT
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